IRFP A, V, Ohm, N-Channel Power. MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP, SiHFP Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole.

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It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

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Repetitive rating; pulse width limited by maximum junction temperature see fig. B, Mar This datasheet is subject to change without notice.

Case Temperature tr td off tf Fig. Drain Current Current regulator Same type as D. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.


IRFP440 MOSFET. Datasheet pdf. Equivalent

Contour of slot optional. Dimension D and E do not include mold flash.

Mold flash shall not exceed 0. These dimensions are measured at the outermost extremes of the plastic body. Thermal pad contour optional with dimensions D1 and E1.

IRF datasheet (electronic components) search result | eet

Lead finish uncontrolled in L1. Datasheet and Mingxin actually photo. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.

To the maximum extent permitted by applicable law, Vishay disclaims i any igfp440 all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Such statements are not binding statements about the suitability of products for a particular application.


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